| 摘要 |
PURPOSE:To reduce the number of masks and increase fitting accuracy at exposure, by providing a means to form a figure-patterned film which has absorbing capability for two or more of wavelengths among rays of electron beams, X rays, and lights on a substrate surface. CONSTITUTION:A figure-patterned film on the surface of a mask substrate acquires selectivity in hampering capability according to wavelengths among rays of electron, X rays, and lights. A means is provided to form a figure- patterned film, which has absorbing capability for each wavelength, on the same substrate. For instance, an SiO2 film 2 is formed on an Si-substrate. An Au-pattern 3 is formed as a light-exposure pattern by photolithography. Similarly, Au-patterns 4, 5 for X-ray exposure are formed by photolithography. Next, Si is removed from the back surface of the Si-substrate by etching and leaving an Si frame 1, and a multiple mask is formed. This means enables combinations other than the above; an ultraviolet ray and a far ultraviolet ray, an electron ray and a light ray, and so forth. |
