| 摘要 |
PURPOSE:To make a MOS with a high break down voltage and without dispersion of characteristics by using a gate electrode as a diffusion mask when forming an off-set gate region and by using a mask of forming a gate electrode as ion injection mask when forming a source and a drain regions. CONSTITUTION:An insulation film 42 of 1mu thickness, in an area where no element region is to be formed and an insulation film 43 of 400-1,000Angstrom thickness in an area where an element region is to be formed, are deposited respectively. Then a metal film 44 and an insulation film 45, both to be gate electrodes, are laminated on the entire surface and the insulation film 45 over the source and drain regions are removed. The metal film 44 is overetched using the remaining insulation film 45 as a mask. The drain region 47 and source region 48 are formed by ion injection using the insulation film 45 as the mask and the offset gate regions 49, 50 are formed in self-alignment manner by diffusing impurity using the metal film 44 as the mask. |
