| 摘要 |
PURPOSE:To prevent breakdown due to abnormal voltage by a method wherein the plane shape of a piercing hole provided in an insulator layer is made into a polygon whose periphery forms a circular arc or an obtuse angles and the shapes of a semiconductor layer and a conductor layer in the part of the piercing hole are made similar to that of the piercing hole. CONSTITUTION:The plane shape of a hole 3 provided in an insulator layer for connecting a diffusion layer 1 and a conductor layer 2 in a semiconductor is made into a circle, for instance. In addition, the diffusion layer 1 and the conductor layer 2 which are made continuative through the intermediary of the hole 3 are made concentric with the hole 3 in a connecting part. The distance between the periphery of the diffusion layer 1 and the hole 3 is set to be 10mum or more and the conductor layer 2 is positioned within the periphery of the diffusion layer 1. Since the connecting part has no corners in this constitution, the concentration of electric fields is not caused and, even when abnormal voltage is applied to a pad 2, the breakdown of P-N junction of the diffusion layer 1. Furthermore, the breakdown is further reduced since the distance between the diffusion layer 1 and the piercing hole 3 is large, and thus the reliability of the device is improved considerably in a long-time operation. |
