| 摘要 |
PURPOSE:To enable precise mask-matching even when it is conducted for three or more layers of mask patterns, by forming the second-layer mask pattern with sufficient margin on the first layer and by forming the third layer between them. CONSTITUTION:On the first-layer mask patten A, the second-layer mask pattern B is formed with sufficiently large margin. Then, the third-layer mask pattern C is formed in a space between the pattern A and the pattern B. At the time of this formation of the pattern C, the mask-matching can be conducted for the pattern A or/and the pattern B with an excellent result. Moreover, in this case, by conducting the mask-matching for the pattern C at the same time with those for the patterns A and B, the mask-matching between the second and third layers is performed very precisely, whereby the occurrence of defects owing to the slippage of mask patterns can be prevented. |
