摘要 |
<p>PURPOSE:To enhance heat radiative property and to prevent generation of inferiority of reverse voltage of a light emitting device by a method wherein the cut apart groove corresponding parts of a cathode electrode are removed, the part corresponding to an N<+> type layer only is made as the cathode electrode, the parts outside of the cut apart grooves are made as reinforcement layers, and the reinforcement layers are made to have the same electric potential with an anode electrode. CONSTITUTION:A P type layer 6, an N type layer 7, an N<+> type layer 8 are formed being accumulated on the lower part of a P type layer thick film substrate 5, and ring type mesa etching is performed to the lower face thereof as to expose the interfaces between the layers 8, 7, 6 to form the isolating grooves 22. The parts other than the center part of the grooves 22 thereof are covered with insulating films 9, the cathode electrode 10 having the flat lower face is provided extending over the layer 8 and the film 9, and moreover a P<+> type layer 11 and the anode electrode 12 are provided being accumulated on the upper part of the substrate 5 excluding a light emitting window 2 to constitute a chip 1, and a fiber 3 having the tip end thereof facing with the window 2 of the chip 1 is provided. The cut apart groove corresponding parts of the electrode 10 of the light emitting device having constitution thereof are removed, the part facing with the layer 8 only is made as the electrode 10, the parts outside of the grooves 22 are made as the reinforcement layers 24, the reinforcement layers 24 thereof are made to have the same electric potential with the electrode 12, and heat radiative property thereof is enhanced.</p> |