| 摘要 |
PURPOSE:To obtain a power MOSFET having superior high-frequency characteristic eliminating source inductance by a method wherein connection between a source and a substrate of the power MOSFET is performed using no wire. CONSTITUTION:A stem, etc., is connected to the P<-> type Si substrate 1 interposing a P<+> type layer 2 and a metal electrode layer 3 between them, and an N<+> type source region 4, an N<+> type drain region 5 and N<-> type withstand voltage parts 6 on the drain side are formed on the surface of the substrate 1. A P<+> type penetrating diffusion layer 7 is formed from the surface of the source region 4 as to reach the P<+> type layer 2 on the surface of the substrate 1, and moreover gate insulating films 8, gates 9 consisting of polycrystalline Si or Mo, insulating films 10 and Al electrodes 11, 12 are formed to constitute the power MOSFET. By providing the diffusion layer 7 from the surface of the substrate 1 to reach the P<+> type layer 2 having low resistance, connection between the electrode 11 and the substrate 1 is attained using no source wire, source inductance can be made to nil, and high-freqency characteristic of the device can be enhanced. |
