| 摘要 |
PURPOSE:To contrive high integration and to obtain a semiconductor device having few reactive current by a method wherein a N<+> type layer is provided at a part of a P type layer provided in an N type Si substrate, and electrodes are provided on the remaining P type layer part. CONSTITUTION:An Si3N4 mask 3 is applied on an SiO2 film 2 on the N type Si substrate 1, and B ions are made to be diffused therein thermally to form the P type layer 7. Then a resist mask 9 is applied and the SiO2 film 8 on the surface of the P type layer is etched to form an opening 10 and three sides of the films 3, 2 at the opening part are made to coincide, and the SiO2 films 8 is reserved at a part of the opening 5 of the film 3. phosphorus is made to be diffused thermally to form an N<+> type emitter layer 11 in the P type base layer 7 by self-alignment. The resist mask 9 is removed, openings are formed in the SiO2 film 12 generated on the surface and in the SiO2 film 8, and electrodes 13, 14 are fixed thereto. By this constitution, breadth of the base layer can be formed extremely narrowly at the three sides of the emitter layer 11, carriers to be implanted therein from the emitter layer 11 is reduced, and recombination quantity is reduced extremely to reduce the reactive current. While because carrier implanting quantity toward the depth direction is increased, the hFE, noise characteristic and switching speed become satisfactorily. Moreover the occupying area can be reduced. |
