| 摘要 |
PURPOSE:To widen a project range, to miniaturize an element, and to improve an electric property, by a method wherein an ion implantation is conducted on a given crystal surface. CONSTITUTION:Under a condition that a surface of an epitaxial layer 3 forms a 100, a P type impurity ion 19 is shot approximately perpendicularly from a surface so that it partially overlaps with a P<+> type source and drain regions 8 and 9 to form a P type ion implanted layer 10. An N type impurity ion 20 is then implanted in a manner that a crystal surface is left as it is, and an N type gate region 11 is provided in the ion implanted layer 10 which forms a channel part. If the ion implantation is conducted through the 100 surface as described above, some ions so shot, entering between lattices and progressing as it is, increase, and can deeply enter into an epitaxial layer. This causes deepening of the channel part 10, which results in increasing a saturated drain current per unit area, miniaturizing an element, and improving an integrating degree of a junction type FET. |
