| 摘要 |
PURPOSE:To contrive to enhance light taking out efficiency of a light emitting diode and to form a light taking out end face easily and having favorable yield by etching treatment by a method wherein a light emitting layer having comparatively short stripe length is formed in the light emitting diode. CONSTITUTION:One or more of GaAs-GaAlAs hetero junctions are formed on a GaAs substrate, and the GaAs-GaAlAs wafers 1-4 to emit light in the direction being in parallel with the epitaxial growth face are formed. Mesa etching is performed from the wafer layers 1-4 up to reach the GaAs substrate 1 to form a light taking out window 8, an oxide film having the prescribed thickness is formed by the chemical oxidation method, etc., Au-Ge is made to be evaporated on the back of the substrate 1, and the prescribed alloying treatment is performed to form an N side electrode 10. An epitaxial layer is formed on the surface of the substrate 1 in the direction of the <001> face, the layer thereof is etched to form the ?-shape in the <001> face, and a Zn diffision layer 5' is formed as a rectangular current path in the direction of <100> <010> at the position of the layer corresponding to one side connecting two facing sides. |
