| 摘要 |
PURPOSE:To shorten the time of exposure of a resist layer formed on a semiconductor substrate, by providing a buffer layer having a specified property between the resist layer and an absorber layer formed on the former. CONSTITUTION:On an SiO2 film 22 formed on an Si substrate 21 is formed a thick positive resist layer 23, whereon a buffer layer 26 is formed. Next, an absorber layer 24 absorbing X-rays or far-ultraviolet rays is formed thereon and further a thin resist layer 25 is formed on the layer 24. For the layer 26 is used material transmitting X-rays or far-ultraviolet rays, being soluble in a solution which does not affect the layer 23, and not being affected by etching when it is applied to the layer 24. Next, the layer 25 is exposed and developed, whereby a resist pattern 25' is formed. Then, by using the pattern 25' as a mask, the layer 24 is etched to form an absorber layer mask 24'. When X-ray exposure is conducted subsequently, the layer 23 is separated into a soluble part 23'' and an insoluble part 23' positioned outside. Next, when the layer 26 is removed to develop the layer 23, the patterning shown by dotted lines is obtained. |
