| 摘要 |
PURPOSE:To restrain the generation of stress to a substrate caused by the difference in thermal expansion coefficient between a passivation film and the substrate, by coating a metal wiring layer with the passivaton film formed of Si nitride through the intermediary of an amorphous Si film. CONSTITUTION:On an Si substrate 1 MOSIC is formed, and the whole surface of an SiO2 film 7 containing the wirings 8 and 9 thereof is coated with the passivation film 10 formed of Si nitride through the intermediary of the amorphous Si film 11. This constitution enables absorption and mitigation by film 11 of the stress caused by the difference in thermal expansion between the film 10 and the substrate 1, under the influence of heat generated on the occasion of piling of Si nitride. As a result, the formation of a trap on the interface between the substrate 1 and a gate oxide film 5 accompanying the generation of stress can be prevented and, in its turn, the fluctuation of threshold-value voltage due to te trap can be prevented. |
