| 摘要 |
PURPOSE:To prevent electrostatic breakdown by a semiconductor device without reducing output level and without increasing the occupying area of chip by a method wherein a capacitor utilizing line capacity of multilayer wiring is added for prevention of electrostatic breakdown between a gate and the output part of an output stage MOS structure. CONSTITUTION:The gate electrode 3 is formed on an Si substrate 1 interposing a gate insulating film 2 between them, and moreover the upper part of the gate electrode 3 is made as to be covered with a drain electrode 5 interposing an interlayer insulating film 4 between them to form a capacitor C1. When electrostatic input E is applied to the drain of a buffer for output of the output stage MOSFET constituted by this way, electric potential of the gate is made to rise by division of capacitance with a capacitor C2 between the substrate-gate and the capacitor C1, a time constant to make electric charge of the gate to be discharged through a prebuffer DMOSFET is formed, and prevention of electrostatic breakdown can be enabled. Accordingly electrostatic breakdown can be prevented effectively without reducing output level, and without increasing the occupying area of chipe. |
