| 摘要 |
<p>PURPOSE:To increase the access speed, by always holding the potential at the charging point during the stand-by mode at the level corresponding to the power supply voltage at that moment after providing a leak current circuit. CONSTITUTION:A leak current circuit X is formed by connecting in series an enhancement type MOS transistor TRQ13 for leakage and a depression type MOS transistor TRQ14 for current limitation. Such circuit X is installed between a low power supply Vss and a point N2. Thus points N2 and N3 are charged to (5.5V-Vth) with a power supply Vcc=5.5V and at the early stand-by period. After this, the electric charge at the point N2 is discharged through the circuit X down to 4.5V-Vth although the level is reduced down to Vcc=4.5V. When the level is reduced down to 4.5V-Vth-DELTAV at the point N2, a TRQ5 is turned on. Thus the electric charge at a point N3 flows to the point N2, and the point N3 is set at the same potential as the point N2. Accordingly no effect is caused due to a reduction of level from Vcc=5.5V to Vcc=4.5V although Vcc=4.5V is kept during an active period.</p> |
