<p>The optoelectronic switch includes a photosensitive GaAs FET (1) on to which an optical signal (11) may be directed. The optical signal (11) is derived from an RF modulated light source (12). A voltage circuit (7) is connected to the FET (1) to switch the FET (1) "on" or "off" by placing a positive or zero voltage respectively on the drain. An isolation of over 70 dB is obtained in this FET switch,</p>
申请公布号
EP0053028(A1)
申请公布日期
1982.06.02
申请号
EP19810305517
申请日期
1981.11.23
申请人
CANADIAN PATENTS AND DEVELOPMENT LIMITED
发明人
HARA, ELMER H.;MACDONALD, R. IAN;HUM, ROBERT S.H.;KAWASAKI, BRIAN S.