| 摘要 |
PURPOSE:To prevent a misfitted transfer from extending in the direction of a central part, by a method wherein auxiliary substrates are placed in an adjoining manner at opposing sides at two sides, where a misfitted transfer is susceptible to produce, of a compound semiconductor layer growing on a substrate to be processed. CONSTITUTION:Auxiliary substrates 6, 6' are placed in an adjoining manner at both sides of a substrate 3 to be processed placed in a concavity 5 in a boat base 1. The auxiliary substrates 6, 6' are required to have a grid constant being approximately equal to that of the substrate 3. The auxiliary substrates 6, 6' are positioned in an adjoining manner at opposing sides at the two sides, paralleling a slider's movement direction shown in an arrow mark, out of the 4 sides of the substrate 3. In the substrate 3 in a surface orientation 100, a misfitted transfer is hard to extend in a 110 orientation and easy to extend in a 1-10 orientation. Provided the direction of the two sides in the direction of the arrow mark is 110, the two sides, being in the direction perpendicular to the direction of the arrow mark, are in the direction of 1-10. Thus, if an epitaxial layer is formed on the substrate 3 without the use of the auxiliary substrates 6 and 6', a misfitted transfer, produced at the two sides in the direction of the arrow mark, extends widely toward the center, and the installation of the auxiliary substrates 6 and 6' permits the suppression of said extension. |
