| 摘要 |
PURPOSE:To manufacture with a simple working process a semiconductor device having a resistance element whose specific resistance is high, by coating a resistance element constituted of semiconductor with an insulating film, and heat-treating the resistance element after a reducing agent is supplied to the insulating film surface. CONSTITUTION:When a resistance element 18 comprising semiconductor is manufactured, the above-mentioned resistance element 18 is coated with an insulating film 21, and a reducing agent is supplied to the surface of the insulating film 21. Then the resistance element 18 is subjected to a heat treatment. For example, in the case of manufacturing a resistance-load type MOS-SRAM, a power source lead 17 and the resistance element 18 are formed by applying a polycrystal Si layer as the second layer on an interlayer-insulating film 16. Then an overcoat film 21 is formed, and an aperture 22 leading to the power source lead 17 is formed on the overcoat film 21. A pad electrode 23 of Al is formed so as to fill the aperture 22. The surface of the overcoat film 21 is dipped, for ten seconds, in a solution whose weight ratio of HF:H2O is 1:200. Finally sintering of Al is performed. |
