| 摘要 |
PURPOSE:To increase the reference voltage accuracy of the high density circuit having a large area by a method wherein, on a reference resistor with which the point of connection of a series-connected resistance unit will be formed at a potential feeding point, the bent part of the auxiliary resistor, provided in the vicinity of a voltage impressed terminal, is electrically connected. CONSTITUTION:The reference resistor R, which will be divided into 256 units to be connected to each comparator, is arranged in eight rows and formed on a semiconductor substrate, and the reference resistor R, to be divided into 256 units which will be connected to each comparator, is formed in zig zag form. The point of connection of each resistance unit is connected to each comparator and an IC of eight bits, for example, to be used for an AD converter, is formed. For example, at the mid-point D of the resistor R, the bent part (mid-point) point B of the auxiliary resistor AR, which is arranged in parallel on a substrate and having voltage impressed terminals VRB and VRT provided in its vicinity, is connected. Through these procedures, the potential at the point D can be corrected to the correct reference potential even when the resistance value of each resistance unit is linearly reduced due to the variation of processing and the like, thereby enabling to improve the accuracy of the reference voltage to be supplied to each comparator located between A and B, and D and E. |
