发明名称 EXPOSING METHOD OF ELECTRON BEAM
摘要 PURPOSE:To improve the accuracy of overlapping making the size of each region to be exposed uniform by controlling a gain of a deflection amplifier so as to correct the height of each region of photo plate and the surface of a reference plate. CONSTITUTION:The distance between M1 and M3 on a substrate 11 of conductive material is obtained by detecting 12 reflected electron of an electron beam scanned M1 and M2. Then the center of deflection system region and the center of the distance are brought together by moving the rack. Again M1 and M3 are scanned to determine the distance and select a gain controlling signal for the deflection system amplifier 6 so as to make the measured value correspond to the first measurement. M2 and M4 in the direction of Y is likewise selected. The height H0 of the reference plate 11 is measured 13. By moving the rack, the height H0 of the first exposure region of the photo plate is measured 13. The controlling gain of the deflection amplifier is minutely controlled using a computer 5 according to H0-H1. As a result, the photo plate 7 is exposed with a width same as the distance of two marks, each exposed region being of the same size with no overlapping or gaps.
申请公布号 JPS5787131(A) 申请公布日期 1982.05.31
申请号 JP19800163785 申请日期 1980.11.20
申请人 NIPPON DENSHI KK 发明人 OKINO TERUAKI
分类号 H01J37/305;H01J37/304;H01L21/027 主分类号 H01J37/305
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