| 摘要 |
PURPOSE:To prevent the breaking of wiring for the subject semiconductor device by a method wherein, when performing a photoetching process on a contact hole, an etching process, which will be performed on a part of film using the pattern having the size which is larger by the prescribed size than the desired pattern, is added and an acute stepping is eliminated. CONSTITUTION:In the process of manufacture of an Si gate MOSIC, for example, after a gate electrode 5, a wiring layer 5', a source and drain diffusion layers 3 and 3', and an interlayer insulating film 6 have been formed successively, a contact hole is formed on a film 6 by performing a photoetching. On the region whereon the contact hole was formed, the film 6 is selectively photoetched at a depth which is 30-70% of the film thickness, using a pattern which is 4-6mum larger than the desired measurements. Then, on the inside of the regions 10 and 11, whereon the film 6 was thinned off, apertures 12 and 13 of the prescribed measurements are formed by performing a photoetching, and then an Al wiring layer 9 is formed. Through these procedures, as the stepping is divided into two parts (double-stepped), the Al wiring 9 can be formed easily, and the generation of breaking of wire can be prevented. |
