| 摘要 |
PURPOSE:To improve the working ratio of an ion implantation device and treatment capacity by providing a number of ionization chambers. CONSTITUTION:Electrostatic deflectors 3 and 4 which make the ion flow that are extracted from two ion sources 1 and 2, respectively, incident on a magnet 5 for mass spectrometry at a specified incident angle are provided. Each ion sources 1 and 2 can fully be separated from a beam line 8 by separation valves 6 and 7, and a single ion source can also be used. When a great amount of ion flow or two types of ion are required, both ion sources can simultaneously be uses. As a result, the working ratio and treatment capacity of the ion source can be improved. |
