| 摘要 |
PURPOSE:To obtain a negative resist for use in ionizing radiation superior in dry etching resistance, resolution, and photosensitivity, by using an azide compound for a novolak type phenol resin having a weight average molecular weight not below a specified value and a dispersion digree not above a specified value. CONSTITUTION:An azide compound, such as p-azidebenzaldehyde is added to s novolak resin having >=1.5X10<4> weight average molecular weight (Mw) and <=3 dispersion degree, that is, Mw/number average molecular weight (Mn) and represented by the formula, R being H, 1-5C alkyl, or phenyl, in 2-20wt% based on the novolak resin. A solution of this mixture is coated on a silicon wafer or the like, dried, prebaked, patternwise irradiated with electron beams or the like, and developed with a mixture of butyl acetate and monochlorobenzene, or the like to form a resist pattern. The obtained resist pattern is superior in resolution and dry etching resistance, and suitable for use in IC, LSI, etc.. |
