| 摘要 |
PURPOSE:To obtain approximately the same characteristics of a light detector as those of similar types by minimizing an exposed area of an integrated photoconductor resistive layer in a light detector in which a photoconductor layer for detecting light and a semiconductor layer acting as diode for signal separation are connected in series. CONSTITUTION:On a caramic substrate 5 such as alumina or the like, a resistive layer 6 consisting of photoconductor such as CdSe, CdS or the like is formed, on which a semiconductive layer is built using tellurium or selenium in a manner of dividing it into two separate layers 10, 10' in order that length of the exposed part of the resistive layer 6 may be restricted a specified value. Next, an NiCr- Au electrode 8 built as a light detecting element from the top center of the layer 10' to the surface of the substrate 5 covering over the exposed area of the resistive layer 6. Likewise, another electrode 8 is built on the layer 10 to form a diode for signal separation. Thus, variation of resistance to the same quantities of light can be approximately the same as that of similar type of elements by limiting areas of the resistive layer which serves as resistive layer for the light detecting element of L1 which is the length of the exposed area, and to L2 and L3 located on each side of the L1. |
