| 摘要 |
PURPOSE:To obtain the IGFET with a small distance between a source and a drain electrodes by a method wherein an Al, to be turned to a Schottokii, is formed and anodic-oxidated on a substrate, the surface layer section of which is converted to Al2 O3, and the width of the electrodes is narrowered by removing the Al2O3 on the lower part only. CONSTITUTION:A GaAs layer 2 is epitaxially grown on the semiconductor substrate 1, the necessary region only is remained by performing a mesa etching, an SiO2 film 6' is grown on the surface, and above this film 6', a spacer 6 of organic high molecule film, consisting of photoresist and the like, is thickly formed. Then, a thin Ti pattern 7 is privided on the spacer 6, the spacer 6 corresponding to the section lacking the pattern 7 is removed using high frequency discharge, and a part of layer 2 is exposed. Subsequently, an Al film is coated on the whole surface, the pattern 7 is removed Rogether with the Al film which was coated on the pattern 7, and the Al Schottokii electrode is remained on a part of the layer 2. Then, the surface of an electrode 5 is converted to an Al2O3 film 5' by performing an anodic oxidization, the lower part only of the film 5' is removed by etching, and the electrode 5 with narrow width is formed. Then, source and drain electrodes 3 and 4 are expanded on the layer 2 located on both sides of the elecrode 5. |
