| 摘要 |
PURPOSE:To prevent breakage of a gas permeable electorode being under a lead connecting process, by a method wherein a buffer layer is laid at a part of a contact part located between a substrate and a gas permeable electrode, and a lead coupling electrode is located at a gas permeable electrode on the buffer layer. CONSTITUTION:A buffer layer 25, made of a high-insulating materials, such as SiO2, Al2O3, Si3N4, BN, AlN, is laid at a contact part positioned between a semiconductor substrate 20 and a gas permeable electrode 21 having a high conductivity. A lead coupling electrode 22 is located in a position corresponding to the buffer layer 25. This constitution prevents deterioration of a property due to the breakage of a barrier, since no barrier is formed at the buffer layer even if a load is applied at a time when a lead 24 is bonded. |
