发明名称 PRODUCTION OF HIGH-MOLECULAR SEMICONDUCTIVE FILM
摘要 PURPOSE:To obtain a high-molecular semiconductive film having utility in solar batteries, by directly forming a film on a substrate by ion-sputtering a target which is a solid monomer, oligomer (dimer or higher oligomer) or polymer. CONSTITUTION:A bell jar 1 is evacuated to a degree of vacuum of 10<-5> Torr by a diffusion pump 7 and an oil rotary pump 8. Next, Ar gas 9 is leaked to set a Pirani gauge at 20-50mu Torr. The Ar gas is glow-discharged by setting the voltage from a D.C. high-voltage source 5 and the current at 2-3KV and 5- 10mA, respectively. The Ar gas impinges on the starting material 4, e.g., aniline dimer or polyaniline, whereby the starting material 4 is excited to the radical state and, at the same time, undergoes a polymerization reaction to form a high- molecular semiconductive film on a substrate 3. Thus, the production of polyaniline films becomes possible and accordingly it is possible to produce inexpensive functional elements by using such a polyaniline film in a functional element using a high-molecular semiconductive film, such as a solar battery.
申请公布号 JPS5785821(A) 申请公布日期 1982.05.28
申请号 JP19800160829 申请日期 1980.11.17
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 EBISAWA FUMIHIRO;FUJIKI MICHIYA
分类号 H01L51/05;B05D1/00;C03C17/32;C08G73/00;C08G73/02;C08G85/00;C08J7/04;C08J7/06;G03C1/74;G03F7/16;H01L21/331;H01L21/363;H01L21/365;H01L29/73;H01L31/04;H01L51/40;H01L51/42 主分类号 H01L51/05
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