| 摘要 |
PURPOSE:To uniformize flow velocity and flow rate in the width direction of gas and to stably form a thin film having uniform film thickness by constituting a nozzle for introducing gas in a CVD device wherein one or two and more kinds of gaseous raw materials are introduced and the thin film is formed on a substrate, so that it consists of a specified structure. CONSTITUTION:In case of feeding a plurality of gasses A, B, C for forming a thin film on a substrate in a CVD device, the flow path of gas C is formed by plates 1, 5 and the flow path of gas B is formed by plates 2, 4 and the flow path of gas A is formed by a plate 3. Respective plates have 0.2-20mm thickness respectively and are constituted of a groove 7 which is long in the width direction for forming gas flow path and has 0.1-100mm width, >0.1mm depth and 0.1-150mm length, a plurality of slender grooves 8 whose ends are connected with the groove 7, a groove 9 wherein a flow path connected to the grooves 8 is enlarged and made confluent and a groove 10 for discharging gas. The groove 9 has <=150mm length, >=0.1mm depth and >=500 enlargement ratio of the flow path area and the length to the outlet of the groove 10 from the gas confluent end is regulated to >=100mm. |
