| 摘要 |
<p>A static induction thyristor in which a mesh gate region is formed on the front surface of a cathode, and a high resistance region having an effective impurity density of 10-11cm-3 to 5.1014cm-3 is interposed between the mesh gate region and a cathode region so that the voltage gain determined by the gate length, gate interval and the distance between the gate and the anode is higher than 10 with a small forward voltage drop, high speed switching ability and high withstand voltage.</p> |
