| 摘要 |
PURPOSE:To permit complicate pattern formation by composing an X-ray exposure pattern from two pattern formation layers. CONSTITUTION:The first-layer grooves 12a and the second-layer grooves 12b are formed at an SiO2 film and diagram-shaped films 14a and 14b such as W or Mo or the like are formed to the grooves 12a and 12b by oblique evaporation 13a and 14a. And a matrix-shaped X-ray diagram crossing with the diagram by the first-layer mask and that by the second-layer mask can be formed by vertically aiming X rays 15 at the surface of the mask. Where, the first-layer mask and the second-layer mask can be formed on the same substrate or a united mask may be composed by forming the first and the second masks on separate substrates respectively and sticking them. |
