| 摘要 |
PURPOSE:To increase gate dielectric resistance, and to prevent the disconnection of wiring metal at the difference in stages of polysilicon by introducing a manufacturing process coating the whole surface of a substrate semiconductor with a thermal oxide film. CONSTITUTION:The thermal oxide film 12 is formed onto the semiconductor substrate 11, only a region where a MOSFET is shaped in the thermal oxide film 12 is removed through selective etching, and a thin thermal oxide film having approximately 1,000Angstrom thickness is formed onto the surface of the semiconductor exposed. The whole surface of the substrate is coated with an oxidation resisting film having approximately 1,500Angstrom thickness such as a silicon nitride film, only the silicon nitride film on a channel section region is left, and other sections are removed. Accordingly, even when the channel is pinched off in the vicinity of a drain, a trap to the thermal oxide film of hot carriers is extremely little, and the MOSFET can stably be manufactured. |
