| 摘要 |
PURPOSE:To detect prompt neutron rays by itself by injecting hydrogen atoms into a low resistance region of a semiconductor board or an electrode. CONSTITUTION:The N region 2 is formed to the P type silicon board 1 having superhigh resistivity. Hydrogen ions are injected into the N region 2 through an ion injection method. The ions are injected under the conditions of 100KeV acceleration voltage and not less than 1X10<15>cm<-2> dosing quantity. When the prompt neutron rays 7 are projected under a condition that inverse voltage to a PN junction is applied between both electrodes 4, 5 of the detector, protons 8 are beaten and driven out through elastic collision, electron-hole pairs are formed in a depletion layer, and pulse currents flow between the electrodes 4, 5, thus detecting the incidence of the prompt neutron rays. |
