| 摘要 |
PURPOSE:To simplify the opening for taking out an electrode of the diffusion layer by a method wherein a resion of the impurities of high concentration and a region of low concentration of the same conductive type are formed outside of the opening for forming an electrode of the region of the high concentration impurities on a semiconductor substrate. CONSTITUTION:After forming an SiO2 film 3 and the photoresistance 4 and 13 on a semiconductor substrate 1 a hole 17 is opened overlapping a region, whereon a field film oxide is to be formed. Next, the impurities of the same conductive type to a high concentration diffusion layer 6 is introduced by an ions driving-in method. Further an FET of MOS type is completed by a standard silicon gate LOCOS process. Then an impurities diffusion layer 16 is formed by introducing the impurities. And, as the impurities diffusion layer 16 is of the same conductive type to a high concentration impurities layer to become a source, drain and wiring, an alloy layer of Al-Si does not break through the impurities diffusion layer 16, even in case the Al electrode 12 contacts an end of the field film oxide 8. |
