| 摘要 |
PURPOSE:To eliminate unevenness of a field oxide film and to prevent generation of crack and disconnection of wiring of an integrated circuit by a method wherein the progress of work to etch a silicon substrate, and the progress of work to make the field oxide film to flow are introduced. CONSTITUTION:After the silicon substrate 202 is etched, selective diffusion is performed to form a region 302 being diffused with boron in low concentration, a region 301 being diffused with phosphorus in high concentration, and a region 303 being diffused with boron in high concentration making an oxide film as a mask. Then the field oxide film 401 is formed by the chemical vapor phase growth method, and is made to flow at a high temperature to form plane structure. Then openings for the contact part and the gate part are formed, followed by the formation of a gate oxide film 602, Al wirings 701, and a gate electrode 702. |
