| 摘要 |
PURPOSE:To extend alloy temperature to the high temperature side by using an Au-Be alloy or an Au-Zn alloy containing Ag in a special weight ratio as a P type electrode of a III-V group compound semiconductor. CONSTITUTION:An Au-Be alloy or an Au-Zn alloy containing Ag of 10-95wt% is deposited on a P type GaP substrate, and is subjected to a heat treatment at temperature up to 650 deg.C, thereby alloying being promoted. Hereby, even when a heat treatment is performed at high temperature, a change of contact resistance is eliminated. Further by extending alloying temperature to the high temperature side, yield for manufacture can be raised. |
