| 摘要 |
PURPOSE:To facilitate the use in high frequency and the integration of a semiconductor device by using two layer structure coated film comprising a Ta layer and an Al layer provided on the side of a semiconductor substrate as at least an electrode. CONSTITUTION:After an N type GaAs layer 2 is grown by epitaxial method on a semiinsulating GaAs substrate 1 said layer 2 is subjected to mesa etching, and then an Au-Ga-Ni alloy is provided on the mesa side part. After that, a Ta layer 3 and an Al layer 4 are evaporated over the entire surface, and then a Schottky-barrier electrode comprising a Ta-Al two layer structure film is formed on the central part by etching using a photoresist. With such constitution, it is possible to perform fine processing easilly by using plasma etching, and thereby the use in high frequency and the integration of a semiconductor device are facilitated. |
