发明名称 KEYING CIRCUIT
摘要 PURPOSE:To improve a keying ratio by forming an MOSFET in a keying circuit having an MOSFET outputting amplitude of an input signal by controlling said amplitude on the basis of a controlling signal in a self alignment process. CONSTITUTION:When an MOSFET is formed which is used for a keying circuit in an electronic musical instrument and the like outputting a musical scale signal by controlling amplitude of an input signal on te basis of an envelope controlling signal, the MOSFET is formed on a semiconductor substrate by using a self alignment process utilizing an Si gate 5. Hereby, since stray capacity between a and a source and the like of the MOSFET can be reduced, and a keying ratio can be considerably improved.
申请公布号 JPS5784165(A) 申请公布日期 1982.05.26
申请号 JP19800161210 申请日期 1980.11.14
申请人 MATSUSHITA DENKI SANGYO KK 发明人 KANEAKI TETSUHIKO;KAWAMOTO KINJI;MURASE KAZUHIRO
分类号 H01L21/8238;H01L27/092;H01L29/08;H01L29/78;H03K17/687 主分类号 H01L21/8238
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