| 摘要 |
A field-controlled bipolar transistor characterized by a bidirectional voltage blocking capability between the collector and emitter electrodes is described as comprising a semiconductor substrate with base, emitter and collector regions formed in the semiconductor substrate with the base region of one conductivity type and the emitter and collector regions of opposite conductivity type. A gate region, also of opposite conductivity type, is formed in the substrate and positioned with respect to the emitter and collector regions so that when the junction formed between the gate region and the substrate is reverse-biased, a depletion region forms which pinches off current flow between the emitter and collector regions thereby providing a transistor that is capable of blocking high voltages in both forward and reverse directions while having normal bipolar transistor characteristics in the forward direction.
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