发明名称 MIS TYPE SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PURPOSE:To prevent Au film separation at the time of wire bonding by a method wherein a substrate is sequentially covered with films of SiO2, Cr, and Au, and then partially with an Al film. CONSTITUTION:Cr easily reacts with SiO2 at 450 deg.C, producing CrSi2. At temperatures not higher than 450 deg.C, the reaction proceeds slowly. Cr, in addition, adheres well to Au. Accordingly, an SiO2 film 6, Cr film 7, and Au film 8 stick to each other well. The Au film 8, together with the Cr film 7 whose resistivity is relatively high, can be made thin enough to transmit light with efficiency and, further, a wire 10 can be bonded to a sufficiently thick Al film. The wire bonding work does not cause the Cr film 7 and the Au film 8 to separate from each other.
申请公布号 JPS5783071(A) 申请公布日期 1982.05.24
申请号 JP19800159148 申请日期 1980.11.11
申请人 SANYO DENKI KK 发明人 TABUCHI KAZUO
分类号 H01L21/28;H01L29/43;H01L33/28;H01L33/38;H01L33/42;H01L33/62 主分类号 H01L21/28
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