| 摘要 |
PURPOSE:To completely protect the whole surface of aluminum wirings with an Si3N4 film as well as to prevent the attenuation in resistance of the aluminum wirings by a method wherein an Si3N4 film is coated on the aluminum wirings. CONSTITUTION:Aluminum wirings 1 are formed on a substrate, and an Si3N4 film 4 is deposited on the aluminum wirings 1. Then, an Si3N4 film is formed by coating on the aluminum wirings 1 by performing a dryetching operation on the Si3N4 film 4 using flon gas. As a result, the attenuation in resistance of the aluminum wirings can be prevented, and as the whole surface of the aluminum wirings 1 is protected by the Si3N4 film 4, the generation of hillocks on the aluminum wirings can be prevented, and the short-circuit generating between two aluminum wirings can be prevented.
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