| 摘要 |
PURPOSE:To improve the yield of a semiconductor laser device by sequentially forming a p type layer and an n type layer having forbidden band width wider than an active layer on a p type clad layer, and forming a V-shaped groove to reach a p type layer readily controlled in etching through the n type layer. CONSTITUTION:An n type AlGaAs layer 2, a p type GaAs active layer 3 and a p type AlGaAs clad layer 4 are sequentially formed on an n type GaAs substrate 1, a P type GaAs layer 11 and an n type AlGaAs layer 12 are formed on the layer 4, and an n type AlGaAs layer 13 is further formed on the layer 12. The forbidded band width of the layer 12 is formed wider than the layer 3, and a V-shaped groove 7a reaching the layer 11 at the end is formed through the layer 12 to reach the layer 11 at the end of the groove 7a, thereby improving the yield of the semiconductor laser device. |
