| 摘要 |
PURPOSE:To accelerate the propagation speed and reduce the power consumption, by connecting a diode between the collector of a level shift transistor and the connector of a phase dividing transistor. CONSTITUTION:A Schottky barrier diode SBDD5 is inserted between the collector of a level shift transistor (TR)Q1 and the collector of a phase dividing TRQ2 so that the cathode of the SBDD5 is connected to the collector side of the TRQ1. When an input voltage rises from the zero level and the TRQ1 becomes the active state, a current from a power source 3 through resistances R1 and R4 is flowed as the emitter current of the TRQ1 to raise the base potential of the TR Q2. Since the value of the resistance R4 is fairly small, the base current supplied to the TRQ2 turns on the TRQ2 in an instant to accelerate the propagation speed. When the TRQ2 becomes the conduction steady state, the collector potential of the TRQ2 becomes lower than that of the TRQ1, and the current of the SBDD5 disappears. |
