发明名称 METALLIC LEAD FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce the numbers of parts and assembling steps by bonding a metal having similar thermal expansion coefficient to an Si pellet to a header of a metallic lead by a metallizing method. CONSTITUTION:A header 12 is formed at one end of a metallic lead 11, and a collar 13 is formed at the rear end at the predetermined distance from the header 12. A metallic film layer M is formed by a metallizing method to the surface of the header 12 of the lead 11 and the outer peripheral surface of the header. Thus, the difference of the thermal expansion between the Si pellet and the metallic lead upon heating at high temperature at the glass baking time is alleviated by the layer M, thereby reducing the thermal stress to the Si pellet as small as possible. Since it does not require additional disc, the numbers of the parts and assembling steps can be reduced.</p>
申请公布号 JPS5780751(A) 申请公布日期 1982.05.20
申请号 JP19800156401 申请日期 1980.11.06
申请人 NIHON INTERNATIONAL SEIRIYUUKI KK 发明人 ABIKO IWAMI;ANDOU KOUJI
分类号 H01L23/48;H01L23/492 主分类号 H01L23/48
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