| 摘要 |
PURPOSE:To remarkably suppress the production of a parasitic capacity between a substrate and a gate electrode by forming th sideface of an interelement isolating film of an elemet region side in a shape of laterally extending in projecting state. CONSTITUTION:A thermally oxidized film 12 and a phosphorus-doped polycrystallien Si layer 13 are sequentially formed on a p pype single crystal Si substrate 11. Then, a nitrided Si pattern 14 is formed on the layer 13. Thereafter, with the pattern 14 as a oxidation resistant mask the layer 13 is selectively oxidized. Thus, a thick oxidized film 16 for isolating elements is formed. After the pattern 14 is removed, remaining polycrystalline Si layer 13' is removed, the exposed film 12 is further removed, and the surface of the substrate 11 is partly exposed. Since the polycrystalline Si layer of the overhang unit of the film 16 is removed at this time, an interelement isolating film 17 of the shape laterally extending in projecting state at the element region is formed. Thus, the parasitic capacity produced at the gate electrode 19 and the substrate 11 can be remarkably reduced in the boundary between the films 17. |
