发明名称 CONTROL CIRCUIT FOR FIELD-EFFECT TRANSISTOR
摘要 PURPOSE:To stabilize the characteristics of switching by mounting a means stopping the flow of exciting currents excited at the secondary side of a transformer into a FET and a means discharging the electric charge of capacity between gate and source electrodes when switching the FET. CONSTITUTION:When predetermined control signals are applied to a base electrode of the transistor 6 and the transistor 6 is brought to an on condition, the currents excited at the secondary side of the pulse transformer 2 charge capacity between the gate and source electrodes of the MOSFET 1 through a resistor 42 and a diode 51. prescribe bias voltage is applied between the gate and source electrodes of the MOSFET 1 at the same time, and the MOSFET 1 is brought to an on condition. When control signals are interrupted and the transistor 6 is turned off, energy stored in the pulse transformer 2 flows through a resistor 41 and a diode 5. The exciting currents at the secondary side are stopped by means of the diode 51, and the electric charge stored to capacity between the gate and source electrodes of the MOSFET 1 is discharged through a resistor 43.
申请公布号 JPS5780274(A) 申请公布日期 1982.05.19
申请号 JP19800154672 申请日期 1980.11.05
申请人 HITACHI SEISAKUSHO KK 发明人 ONDA KENICHI;ABE KIMIHITO;AMANO HISAO
分类号 G05F1/10;H02M3/335;H02M7/537 主分类号 G05F1/10
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