| 摘要 |
PURPOSE:To prevent the reflection of conductive films and to obtain an easy to see display by supplying gaseous mixture of monosilane and N2 and gaseous mixture of org. titanium and N2 simultaneously on a heated glass substrate, and thermally cracking these thereby forming the films of the mixture of SiO2 and TiO2. CONSTITUTION:The gases consisting of bubbling the gaseous N2 controlled of flow rate through a flowmeter 13b in a soln. of Ti(OC3H7)4 or the like in a vessel 13c and mixing the same with carrier N2 passed through a flowmeter 13 are supplied through a piping 17 to an injection nozzle, and similarly the gaseous N2 contg. water in a vessel 14c is supplied to an injection nozzle 17 through a piping 14, and the gaseous SiH4 controlled of flow rate by a flowmeter 15b, and the carrier gaseous N2 past a flowmeter 15b through a piping 15 to said nozzle, by which these gases are inejcted simultaneously onto the glass substrate 11 in a reaction chamber 12. The inside of the chamber 12 is heated to 300-500 deg.C, and the Ti, Si compounds in the mixed gases are cracked, whereby the mixed insulation films of SiO2 and TiO2 are formed on the substrate 11. The refreactive index of the films is obtained at an arbitrary value between 1.45-2.2. |
