发明名称 |
Method for conditioning nitride surface |
摘要 |
A method of conditioning a nitride surface by treating it with ionized oxygen is disclosed. The nitride surface is placed in a vacuum and treated with the ionized oxygen for a period of time sufficient to condition the nitride for subsequent processing steps. The ionized oxygen treatment is performed substantially at ambient temperature. The conditioning method is included in a process for improving the adhesion characteristics of a photoresist film to a silicon nitride surface. A liquid solution of hexamethyldisilazane is applied to the conditioned nitride surface. Thereafter, a photoresist is applied, exposed through a photographic mask and developed in a known manner for the purpose of forming a photoresist masking film pattern. The photoresist film pattern typically serves as a mask during an etching process in which areas not covered by photoresist are removed by a suitable etching solution.
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申请公布号 |
US4330569(A) |
申请公布日期 |
1982.05.18 |
申请号 |
US19800195806 |
申请日期 |
1980.10.10 |
申请人 |
NCR CORPORATION |
发明人 |
GULETT, MICHAEL R.;TRUDEL, MURRAY L.;STEWART, JR., JOHN K. |
分类号 |
C04B41/45;C04B41/52;C04B41/81;C04B41/89;H01L21/3105;H01L21/312;(IPC1-7):B05D3/06 |
主分类号 |
C04B41/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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