发明名称 METHOD FOR THE EPITAXIAL DEPOSITION OF SEVERAL LAYERS
摘要 <p>7-9-1978 1 PHN 8934 "" "Method for the epitaxial deposition of several layers". A method of manufacturing a device comprising a monocrystalline substrate and several epitaxial layers deposited on the substrate, the substrate being successively contacted with solutions which are previously brought to the saturated state by contact with an auxiliary substrate and the substrate with the solutions and the auxiliary substrate is cooled and the layers are successively deposited, characterized in that the epitaxial deposition comprises four phases of which in the first phase of the epitaxial process a first solution is contacted with a first auxiliary substrate, in the second phase the first solution is contacted with a second auxiliary substrate and simultaneously a second solution is contacted with the first auxiliary substrate, in the third phase the first solution is contacted with the substrate and simultaneously the second solution is contacted with the second auxiliary substrate, and in the fourth phase the second solution is contacted with the substrate.</p>
申请公布号 CA1123967(A) 申请公布日期 1982.05.18
申请号 CA19780314402 申请日期 1978.10.26
申请人 N.V. PHILIPS'GLOEILAMPENFABRIEKEN 发明人 VAN OIRSCHOT, THEODORUS G.J.;LESWIN, WILLEM J.;THIJS, PETRUS J.A.;NIJMAN, WILLEM
分类号 H01L33/00;C30B19/00;C30B19/06;C30B29/40;H01L21/208;(IPC1-7):01L21/36 主分类号 H01L33/00
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