发明名称 Selective photoinduced condensation technique for producing semiconducting compounds
摘要 A process for producing a variety of organic-inorganic luminescent and semiconductive compounds or materials in the form of a film deposited directly on the surface of a substrate by ultraviolet photoinduced condensation from gaseous reactants such as antimony pentafluoride (SbF5)n and organic or inorganic halogen-containing compounds. The process provides a new class of antimony (Sb) doped luminescent and semiconductive materials which can be produced on any arbitrary size or shape substrate, or even on existing substrates of other semiconductive materials or chips, to form semiconductive devices. The process may be used in photoinducing luminescent panel displays or microelectronic circuits, such as integrated electrical or optical circuits.
申请公布号 US4330570(A) 申请公布日期 1982.05.18
申请号 US19810257028 申请日期 1981.04.24
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 GIULIANI, JOHN F.;AUERBACH, ABE
分类号 C07F9/90;C23C16/22;C23C16/48;H01L51/00;(IPC1-7):C23C13/04 主分类号 C07F9/90
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