| 摘要 |
PURPOSE:To obtain a semiconductor device with enhanced dilelctric withstand voltage and being enabled to intergrated even a high voltage circuit by a method wherein the device is made to have silicon/magnesia spinel/silicon structure. CONSTITUTION:A concave part 12 is formed on a silicon substrate 11, and a magnesia spinel (MgO.Al2O3) layer 13 is made to grow adhering on the substrate 11. Then a P<+> type silicon epitaxial layer 14 is made to grow on the upper face of the MgO.Al2O3 layer, and a P type silicon epitaxial layer 15 is made to grow the same on the upper face thereof. Moreover it is polished up to expose the P type silicon epitaxial layer, and the region in the convex region necessitating to be isolated is oxidized to form silicon dioxide layers 18. |
