FELTEFFEKTRANSISTOR

摘要

Vertical type field effect transistors are disclosed including one of the highly doped source, gate and drain regions disposed on one of the main opposite faces of one of the semiconductor substrate and the remaining region or regions disposed on the other mainface of the substrate. At least one of the regions is divided into a plurality of elongated slender portions and metallic electrodes are disposed in ohmic contact with the respective regions so as to be identical in configuration to the latter. The highly doped regions themselves may form electrodes.