| 摘要 |
PURPOSE:To maintain the resistance value of a semiconductor integrated circuit by isolating a p type diffused resistor and a p type diffused layer on an n type epitaxial layer, forming an n type diffused resistor in a p type diffused layer, and connecting p type diffused resistor in parallel, thereby cancelling the variation in the resistance value due to the variation in the current. CONSTITUTION:p type diffused regions 2, 3 are isolated on an n type epitaxial layer 1 on a p type substrate, and an n type diffused layer 4 is formed in the region 3. Two terminals are provided at the lyers 2, 4 as resistors formed so that the resistance values become equal and connected in parallel. The maximum potential +Vcc of the circuit is applied to the layer 1 for biasing, the layer 3 is set to 0 volt equal to the substrate to insulate the layers 2, 4. In this manner, the variation in the resistance (variation in the depletion layer width due to the variation in the junction voltage) at the time of energizing the layers 2, 4 can be cancelled, thereby maintaining the resistance values connected in parallel constantly. |
